052-6211 rev e 6-2008 apt30gt60br(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise specifed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 250 a) gate threshold voltage (v ce = v ge , i c = 700 a , t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts a na symbol v c es v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt30gt60br(g) 600 30 64 30 110 110a @ 600v 250 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt w ebsite - http://www .a dv ancedpo we r. com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. min typ max 600 3 4 5 1.6 2.0 2.5 2.8 50 1000 100 600v apt 30gt60br APT30GT60BRG* *g denotes rohs compliant, pb free terminal finish. ? the thunderblot igbt ? is a new generation of high voltage power igbts. using non- punch through technology, the thunderblot igbt ? offers superior ruggedness and ultrafast switching speed. ? low forward voltage drop ? high freq. switching to 100khz ? low tail current ? ultra low leakage current ? rbsoa and scsoa rated thunderbolt igbt ? t o - 2 4 7 g c e g c e
052-6211 rev e 6-2008 apt30gt60br(g) thermal and mechanical characteristics unit c/w gm min typ max .50 n/a 5.9 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 30a t j = 150c, r g = 10 ?, v ge = 15v, l = 100h,v ce = 600v i nductive 3itching v cc = 400v v ge = 15v i c = 30a r g = 10 ? t j = +25c )nductive 3witching v cc = 400v v ge = 15v i c = 30a r g = 10 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 1600 150 92 7.5 145 10 60 110 12 20 225 80 525 605 600 12 20 245 100 570 965 830 unit pf v nc a ns j ns j 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in fgure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 04 2eservestherightto change without notice thespecilcationsand informationcontainedherein
052-6211 rev e 6-2008 apt30gt60br(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 100 90 80 70 60 50 40 30 20 10 0 100 90 80 70 60 50 40 30 20 10 0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 20 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 6 8 10 12 14 16 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 140 120 100 80 60 40 20 0 16 14 12 10 8 6 4 2 0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 90 80 70 60 50 40 30 20 10 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case temperature 15 &13v 9v 8v 7v 10v 6v t j = 125c t j = 25c t j = -55c t j = 25c. 250s pulse test <0.5 % duty cycle i c = 60a i c = 30a i c = 15a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 60a i c = 30a i c = 15a t j = 125c t j = 25c t j = -55c 11v v ce = 480v v ce = 300v v ce = 120v i c = 30a t j = 25c v ge = 15v
052-6211 rev e 6-2008 apt30gt60br(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 10 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) )2 4urn/n elay 4imevsollectorurrent )2 4urn/ff elay 4imevsollectorurrent i ce , collector to emitter current (a) i ce , collector to emitter current (a) )2 urrent2ise 4imevsollectorurrent )2 urrent all 4imevsollectorurrent i ce , collector to emitter current (a) i ce , collector to emitter current (a) )2 4urn/n nergy,ossvsollectorurrent )2 4urn /ff nergy,ossvsollectorurrent r g , gate resistance (ohms) t j *.4)/. 4-0242 )2 3itching nergy,ossesvs ate2esistance )2 3itching nergy,ossesvs *unction 4emperature r g = 10 ? , l = 100 h, v ce = 400v v ce = 400v t j = 25c , or 125c r g = 10 ? l = 100 h 16 14 12 10 8 6 4 2 0 60 50 40 30 20 10 0 3000 2500 2000 1500 1000 500 0 4500 4000 3500 3000 1500 1000 500 0 300 250 200 150 100 50 0 160 140 120 100 80 60 40 20 0 2000 1500 1000 500 0 3000 2500 2000 1500 1000 500 0 v ge = 15v t j = 125c , v ge = 15v t j = 25 or 125c ,v ge = 15v t j = 25c , v ge = 15v v ce = 400v v ge = +15v r g = 10 ? 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 0 25 50 75 100 125 r g = 10 ? , l = 100 h, v ce = 400v v ce = 400v v ge = +15v r g = 10 ? t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 10 ? t j = 125c t j = 25c e on2, 60a e off, 60a v ce = 400v v ge = +15v t j = 125 c e on2, 30a e off, 30a e on2, 15a e off, 15a e on2, 60a e off, 60a e on2, 30a e off, 30a e on2, 15a e off, 15a
052-6211 rev e 6-2008 apt30gt60br(g) typical performance curves 0.60 0.50 0.40 0.30 0.20 0.10 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) &igurea -aximum %ffective 4ransient 4hermal )mpedance unction4oasevs0ulseuration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 3,000 1,000 500 100 50 10 120 100 80 60 40 20 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage igure apacitancev s collecto r4omitter 6oltage igure-inimim 3itching 3afe/peratingrea 0 10 20 30 40 50 0 100 200 300 400 500 600 700 &)52%b 42.3)%.4 4(%2-, )-0%.%-/%, 5 15 25 35 45 55 65 f max , operating frequency (khz) i c , collector current (a) igure /perating reuencyvsollectorurrent t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 10 ? 140 50 10 5 1 c res 0.5 0.1 0.05 f max = min (f ma x , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : c oes c ies 0.0838 0.207 0.209 0.00245 0.00548 0.16 5 powe r (watts ) junctio n temp. ( c) rc mode l case temperature. ( c)
052-6211 rev e 6-2008 apt30gt60br(g) apt40dq60 figure 22, turn-on switching waveforms and defnitions figure 23, turn-off switching waveforms and defnitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce figure 21, inductive switching test circui t v cc apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. to - 247 package outlin e e1 sac: tin, silver, copper 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector collect or emitte r gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs.
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